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STB34N50DM2AG

STB34N50DM2AG STMicroelectronics


1419924690738926dm002.pdf Hersteller: STMicroelectronics
Trans MOSFET N-CH 500V 26A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
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Technische Details STB34N50DM2AG STMicroelectronics

Description: MOSFET N-CH 500V 26A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 12.5A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: D²PAK (TO-263), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V, Grade: Automotive, Qualification: AEC-Q101.

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STB34N50DM2AG STB34N50DM2AG Hersteller : STMicroelectronics 1419924690738926dm002.pdf Trans MOSFET N-CH 500V 26A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
STB34N50DM2AG STB34N50DM2AG Hersteller : STMicroelectronics 1419924690738926dm002.pdf Trans MOSFET N-CH 500V 26A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
STB34N50DM2AG Hersteller : STMicroelectronics 1419924690738926dm002.pdf Trans MOSFET N-CH 500V 26A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
STB34N50DM2AG STB34N50DM2AG Hersteller : STMicroelectronics en.DM00223646.pdf Description: MOSFET N-CH 500V 26A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
STB34N50DM2AG STB34N50DM2AG Hersteller : STMicroelectronics en.DM00223646.pdf Description: MOSFET N-CH 500V 26A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
STB34N50DM2AG STB34N50DM2AG Hersteller : STMicroelectronics stb34n50dm2ag-1850201.pdf MOSFET Automotive-grade N-channel 500 V, 0.10 Ohm typ 26 A MDmesh DM2 Power MOSFET
Produkt ist nicht verfügbar