STB34N50DM2AG STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 26A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Technische Details STB34N50DM2AG STMicroelectronics
Description: MOSFET N-CH 500V 26A D2PAK, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 190W (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 12.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote STB34N50DM2AG
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STB34N50DM2AG | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 500V 26A D2PAK Qualification: AEC-Q101 Grade: Automotive Rds On (Max) @ Id, Vgs: 120mOhm @ 12.5A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 190W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±25V |
Produkt ist nicht verfügbar |
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STB34N50DM2AG | Hersteller : STMicroelectronics |
MOSFET Automotive-grade N-channel 500 V, 0.10 Ohm typ 26 A MDmesh DM2 Power MOSFET |
Produkt ist nicht verfügbar |