STB34NM60N

STB34NM60N STMicroelectronics


stb34nm60n-1850141.pdf Hersteller: STMicroelectronics
MOSFET N-Ch 600V 0.092Ohm 29A MDMesh II MOS
auf Bestellung 980 Stücke:

Lieferzeit 931-945 Tag (e)
Anzahl Preis ohne MwSt
3+24.49 EUR
10+ 20.98 EUR
25+ 19.03 EUR
100+ 17.47 EUR
250+ 16.43 EUR
500+ 15.42 EUR
1000+ 13.88 EUR
Mindestbestellmenge: 3
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Technische Details STB34NM60N STMicroelectronics

Description: MOSFET N-CH 600V 29A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 14.5A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2722 pF @ 100 V.

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STB34NM60N STB34NM60N Hersteller : STMicroelectronics 1685408732066370cd002.pdf Trans MOSFET N-CH 600V 31.5A 3-Pin(2+Tab) D2PAK T/R
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STB34NM60N Hersteller : STMicroelectronics 1685408732066370cd002.pdf Trans MOSFET N-CH 600V 31.5A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
STB34NM60N STB34NM60N Hersteller : STMicroelectronics en.CD00279556.pdf Description: MOSFET N-CH 600V 29A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 14.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2722 pF @ 100 V
Produkt ist nicht verfügbar
STB34NM60N STB34NM60N Hersteller : STMicroelectronics en.CD00279556.pdf Description: MOSFET N-CH 600V 29A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 14.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2722 pF @ 100 V
Produkt ist nicht verfügbar