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STB34NM60ND

STB34NM60ND STMicroelectronics

STx34NM60ND_DS.pdf Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 29A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
auf Bestellung 868 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+17.99 EUR
100+ 16.07 EUR
500+ 14.18 EUR
Produktrezensionen
Produktbewertung abgeben

Technische Details STB34NM60ND STMicroelectronics

Description: MOSFET N-CH 600V 29A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V.

Weitere Produktangebote STB34NM60ND nach Preis ab 15 EUR bis 26.42 EUR

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Preis ohne MwSt
STB34NM60ND STB34NM60ND Hersteller : STMicroelectronics sgsts50105_1-2282691.pdf MOSFET N-Ch Power Mosfet 600V 0.097 Ohm 29A
auf Bestellung 1994 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
2+26.42 EUR
10+ 22.65 EUR
25+ 22.62 EUR
100+ 18.88 EUR
250+ 18.85 EUR
500+ 16.67 EUR
1000+ 15 EUR
Mindestbestellmenge: 2
STB34NM60ND STB34NM60ND Hersteller : STMicroelectronics STx34NM60ND_DS.pdf Description: MOSFET N-CH 600V 29A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
auf Bestellung 868 Stücke:
Lieferzeit 10-14 Tag (e)
STB34NM60ND STB34NM60ND Hersteller : STMicroelectronics 1524135947840382cd002.pdf Trans MOSFET N-CH 600V 29A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
STB34NM60ND STB34NM60ND Hersteller : STMicroelectronics 1524135947840382cd002.pdf Trans MOSFET N-CH 600V 29A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
STB34NM60ND Hersteller : STMicroelectronics 1524135947840382cd002.pdf Trans MOSFET N-CH 600V 29A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar