STB35N60DM2 STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in D2PAK package
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.78 EUR |
| 10+ | 8.16 EUR |
| 100+ | 6.15 EUR |
| 500+ | 5.46 EUR |
| 1000+ | 5.01 EUR |
| 2000+ | 4.9 EUR |
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Lieferzeit:
10-14 Tag (e)
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Technische Details STB35N60DM2 STMicroelectronics
Description: MOSFET N-CH 600V 28A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V, Power Dissipation (Max): 210W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V.
Weitere Produktangebote STB35N60DM2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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STB35N60DM2 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; 600V; 28A; 210W; D2PAK,TO263 Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Power dissipation: 210W Case: D2PAK; TO263 Mounting: SMD Gate charge: 54nC Drain current: 28A Kind of channel: enhancement Drain-source voltage: 600V Gate-source voltage: ±25V |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| STB35N60DM2 |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; 600V; 28A; 210W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Power dissipation: 210W
Case: D2PAK; TO263
Mounting: SMD
Gate charge: 54nC
Drain current: 28A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±25V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; 600V; 28A; 210W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Power dissipation: 210W
Case: D2PAK; TO263
Mounting: SMD
Gate charge: 54nC
Drain current: 28A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±25V
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)