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STB35N60DM2

STB35N60DM2 STMicroelectronics

STB35N60DM2.pdf
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in D2PAK package
auf Bestellung 578 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+10.24 EUR
10+6.79 EUR
100+4.95 EUR
500+4.49 EUR
1000+3.71 EUR
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Technische Details STB35N60DM2 STMicroelectronics

Description: MOSFET N-CH 600V 28A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V, Power Dissipation (Max): 210W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V.

Weitere Produktangebote STB35N60DM2 nach Preis ab 3.73 EUR bis 3.73 EUR

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STB35N60DM2 Hersteller : STMicroelectronics STB35N60DM2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 28A; Idm: 28A; 210W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: N
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 210W
Case: D2PAK; TO263
Gate-source voltage: 25V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 54nC
Pulsed drain current: 28A
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+3.73 EUR
Mindestbestellmenge: 1000
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STB35N60DM2 STB35N60DM2 Hersteller : STMicroelectronics stb35n60dm2.pdf Trans MOSFET N-CH 600V 28A 3-Pin(2+Tab) D2PAK T/R
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STB35N60DM2 STB35N60DM2 Hersteller : STMicroelectronics STB35N60DM2.pdf Description: MOSFET N-CH 600V 28A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
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STB35N60DM2 STB35N60DM2 Hersteller : STMicroelectronics STB35N60DM2.pdf Description: MOSFET N-CH 600V 28A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH