STB35N60DM2 STMicroelectronics
Hersteller: STMicroelectronicsMOSFETs N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in D2PAK package
auf Bestellung 584 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.48 EUR |
| 10+ | 6.23 EUR |
| 100+ | 4.7 EUR |
| 500+ | 4.47 EUR |
| 1000+ | 3.78 EUR |
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Technische Details STB35N60DM2 STMicroelectronics
Description: MOSFET N-CH 600V 28A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V, Power Dissipation (Max): 210W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V.
Weitere Produktangebote STB35N60DM2
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STB35N60DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 28A 3-Pin(2+Tab) D2PAK T/R |
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STB35N60DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 28A 3-Pin(2+Tab) D2PAK T/R |
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| STB35N60DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 28A 3-Pin(2+Tab) D2PAK T/R |
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STB35N60DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 28A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB35N60DM2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 28A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V |
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STB35N60DM2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 28A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V |
Produkt ist nicht verfügbar |