STB35N60DM2 STMicroelectronics
Hersteller: STMicroelectronics
MOSFET N-channel 600 V, 0.094 Ohm typ 28 A MDmesh DM2 Power MOSFETs in D2PAK package
MOSFET N-channel 600 V, 0.094 Ohm typ 28 A MDmesh DM2 Power MOSFETs in D2PAK package
auf Bestellung 589 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 14.33 EUR |
10+ | 12.04 EUR |
25+ | 11.36 EUR |
100+ | 9.75 EUR |
250+ | 9.18 EUR |
500+ | 8.66 EUR |
1000+ | 7.44 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STB35N60DM2 STMicroelectronics
Description: MOSFET N-CH 600V 28A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V, Power Dissipation (Max): 210W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V.
Weitere Produktangebote STB35N60DM2
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
STB35N60DM2 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 28A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
||
STB35N60DM2 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 28A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
||
STB35N60DM2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 28A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V |
Produkt ist nicht verfügbar |
||
STB35N60DM2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 28A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V |
Produkt ist nicht verfügbar |