Produkte > STMICROELECTRONICS > STB36N60M6

STB36N60M6 STMicroelectronics

Name: STB36N60M6
Brand: STMicroelectronics
SKU: 146028-4
Price: 7.15 EUR
Availability: InStock

Hersteller: STMicroelectronics
MOSFET N-channel 600 V, 85 mOhm typ 30 A MDmesh M6 Power MOSFET

auf Bestellung 548 Stücke:

Lieferzeit 14-28 Tag (e)

Anzahl	Preis ohne MwSt
4+	14.07 EUR
10+	11.83 EUR
25+	7.64 EUR
100+	7.33 EUR
250+	7.25 EUR
500+	7.18 EUR
1000+	7.15 EUR

Mindestbestellmenge: 4

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Technische Details STB36N60M6 STMicroelectronics

Description: MOSFET N-CH 600V 30A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 44.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 100 V.

Weitere Produktangebote STB36N60M6

Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit
STB36N60M6	Hersteller : STMicroelectronics	Trans MOSFET N-CH 600V 30A 3-Pin(2+Tab) D2PAK T/R	auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e)
STB36N60M6	Hersteller : STMicroelectronics	Trans MOSFET N-CH 600V 30A 3-Pin(2+Tab) D2PAK T/R	Produkt ist nicht verfügbar
STB36N60M6	Hersteller : STMicroelectronics	Description: MOSFET N-CH 600V 30A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 44.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 100 V	Produkt ist nicht verfügbar
STB36N60M6	Hersteller : STMicroelectronics	Description: MOSFET N-CH 600V 30A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 44.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 100 V	Produkt ist nicht verfügbar