STB36NM60N STMicroelectronics
auf Bestellung 23 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 16.85 EUR |
| 10+ | 15.21 EUR |
| 100+ | 12.58 EUR |
| 500+ | 10.95 EUR |
| 1000+ | 9.54 EUR |
| 2000+ | 9.18 EUR |
| 5000+ | 8.76 EUR |
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Technische Details STB36NM60N STMicroelectronics
Description: MOSFET N-CH 600V 29A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 14.5A, 10V, Power Dissipation (Max): 210W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D²PAK (TO-263), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 83.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2722 pF @ 100 V.
Weitere Produktangebote STB36NM60N
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STB36NM60N | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 600V 29A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB36NM60N | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 29A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 14.5A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 83.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2722 pF @ 100 V |
Produkt ist nicht verfügbar |
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STB36NM60N | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 29A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 14.5A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 83.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2722 pF @ 100 V |
Produkt ist nicht verfügbar |