Weitere Produktangebote STB36NM60ND nach Preis ab 4.95 EUR bis 11.97 EUR
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STB36NM60ND | Hersteller : STMicroelectronics |
 MOSFET Auto-grade N-CH 650V 29A FDmesh II 0.097 |
auf Bestellung 975 Stücke: Lieferzeit 374-378 Tag (e) |
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STB36NM60ND | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 29A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 1225 Stücke: Lieferzeit 10-14 Tag (e) |
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STB36NM60ND | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STB36NM60ND - Leistungs-MOSFET, n-Kanal, 600 V, 29 A, 0.097 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 29A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 190W Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 190W Bauform - Transistor: TO-263 (D2PAK) Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3Pin(s) Produktpalette: FDmesh II productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.097ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.097ohm SVHC: No SVHC (15-Jan-2019) |
auf Bestellung 562 Stücke: Lieferzeit 14-21 Tag (e) |
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STB36NM60ND | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 29A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V Qualification: AEC-Q101 |
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