Weitere Produktangebote STB36NM60ND nach Preis ab 4.95 EUR bis 11.97 EUR
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STB36NM60ND | Hersteller : STMicroelectronics |
 MOSFET Auto-grade N-CH 650V 29A FDmesh II 0.097 |
auf Bestellung 975 Stücke: Lieferzeit 374-378 Tag (e) |
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STB36NM60ND | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 29A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 1225 Stücke: Lieferzeit 10-14 Tag (e) |
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STB36NM60ND | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 29A D2PAK Current - Continuous Drain (Id) @ 25°C: 29A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Last Time Buy Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 190W (Tc) |
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