STB38N65M5 STMicroelectronics
auf Bestellung 990 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 15.83 EUR |
| 10+ | 13.31 EUR |
| 100+ | 10.76 EUR |
| 500+ | 9.57 EUR |
| 1000+ | 8.03 EUR |
| 2000+ | 7.54 EUR |
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Technische Details STB38N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 30A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V.
Weitere Produktangebote STB38N65M5
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STB38N65M5 Produktcode: 58402 |
Hersteller : ST |
 Verschiedene Bauteile > Verschiedene Bauteile 2Beschreibung: MOSFET N-Ch 650V 0.076 Ohm 30 A MDmesh V |
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STB38N65M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 30A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| STB38N65M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 30A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB38N65M5 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19A; 190W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Power dissipation: 190W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 95mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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STB38N65M5 | Hersteller : STMicroelectronics |
STB38N65M5 STMicroelectronics Transistors MOSFETs N-CH 650V 30A 3-Pin(2+Tab) D2PAK T/R - Arrow.com |
Produkt ist nicht verfügbar |
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STB38N65M5 | Hersteller : STMicroelectronics |
STB38N65M5 STMicroelectronics Transistors MOSFETs N-CH 650V 30A 3-Pin(2+Tab) D2PAK T/R - Arrow.com |
Produkt ist nicht verfügbar |
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STB38N65M5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 30A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V |
Produkt ist nicht verfügbar |
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STB38N65M5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 30A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V |
Produkt ist nicht verfügbar |
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STB38N65M5 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19A; 190W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Power dissipation: 190W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 95mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |