STB3NK60ZT4 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 2.4A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 25 V
Description: MOSFET N-CH 600V 2.4A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1000+ | 0.91 EUR |
2000+ | 0.86 EUR |
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Technische Details STB3NK60ZT4 STMicroelectronics
Description: MOSFET N-CH 600V 2.4A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc), Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 25 V.
Weitere Produktangebote STB3NK60ZT4 nach Preis ab 1.12 EUR bis 2.05 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
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STB3NK60ZT4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 2.4A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 25 V |
auf Bestellung 3272 Stücke: Lieferzeit 21-28 Tag (e) |
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STB3NK60ZT4 | Hersteller : ST | TO-263/D2-PAK |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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STB3NK60ZT4 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 2.4A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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STB3NK60ZT4 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 2.4A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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STB3NK60ZT4 | Hersteller : STMicroelectronics | MOSFET N-Ch 600 Volt 2.4 A Zener SuperMESH |
Produkt ist nicht verfügbar |