STB3NK60ZT4 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 2.4A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 9+ | 2.13 EUR |
| 14+ | 1.34 EUR |
| 100+ | 0.89 EUR |
| 500+ | 0.7 EUR |
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Technische Details STB3NK60ZT4 STMicroelectronics
Description: MOSFET N-CH 600V 2.4A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 4.5V @ 50µA, Power Dissipation (Max): 45W (Tc), Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).
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STB3NK60ZT4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 2.4A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4.5V @ 50µA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
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