STB3NK60ZT4

STB3NK60ZT4 STMicroelectronics


stp3nk60z.pdf Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 2.4A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 25 V
auf Bestellung 2000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+0.91 EUR
2000+ 0.86 EUR
Mindestbestellmenge: 1000
Produktrezensionen
Produktbewertung abgeben

Technische Details STB3NK60ZT4 STMicroelectronics

Description: MOSFET N-CH 600V 2.4A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc), Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 25 V.

Weitere Produktangebote STB3NK60ZT4 nach Preis ab 1.12 EUR bis 2.05 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
STB3NK60ZT4 STB3NK60ZT4 Hersteller : STMicroelectronics stp3nk60z.pdf Description: MOSFET N-CH 600V 2.4A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 25 V
auf Bestellung 3272 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.05 EUR
16+ 1.7 EUR
100+ 1.32 EUR
500+ 1.12 EUR
Mindestbestellmenge: 13
STB3NK60ZT4 Hersteller : ST stp3nk60z.pdf TO-263/D2-PAK
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
STB3NK60ZT4 Hersteller : STMicroelectronics en.cd00003099.pdf Trans MOSFET N-CH 600V 2.4A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
STB3NK60ZT4 STB3NK60ZT4 Hersteller : STMicroelectronics en.cd00003099.pdf Trans MOSFET N-CH 600V 2.4A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
STB3NK60ZT4 STB3NK60ZT4 Hersteller : STMicroelectronics en.CD00003099-1222749.pdf MOSFET N-Ch 600 Volt 2.4 A Zener SuperMESH
Produkt ist nicht verfügbar