STB42N60M2-EP STMicroelectronics
auf Bestellung 3000 Stücke:
Lieferzeit 416-430 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 14.98 EUR |
10+ | 12.58 EUR |
25+ | 11.88 EUR |
100+ | 10.19 EUR |
250+ | 9.59 EUR |
500+ | 9.05 EUR |
1000+ | 7.75 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STB42N60M2-EP STMicroelectronics
Description: MOSFET N-CH 600V 34A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 87mOhm @ 17A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 100 V.
Weitere Produktangebote STB42N60M2-EP
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
STB42N60M2-EP | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 34A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
||
STB42N60M2-EP | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 34A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
||
STB42N60M2-EP | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 34A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 17A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 100 V |
Produkt ist nicht verfügbar |
||
STB42N60M2-EP | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 34A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 17A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 100 V |
Produkt ist nicht verfügbar |