STB45N50DM2AG STMicroelectronics
Hersteller: STMicroelectronicsMOSFETs Automotive-grade N-channel 500 V, 0.07 Ohm typ., 35 A MDmesh DM2 Power MOSFET in
auf Bestellung 1979 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 10.44 EUR |
| 10+ | 7.64 EUR |
| 100+ | 6.12 EUR |
| 500+ | 6.11 EUR |
| 1000+ | 5.24 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STB45N50DM2AG STMicroelectronics
Description: MOSFET N-CH 500V 35A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 84mOhm @ 17.5A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V, Qualification: AEC-Q101.
Weitere Produktangebote STB45N50DM2AG nach Preis ab 6.15 EUR bis 11.79 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STB45N50DM2AG | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 500V 35A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 84mOhm @ 17.5A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V Qualification: AEC-Q101 |
auf Bestellung 402 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
 |
STB45N50DM2AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 500V 35A Automotive 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||
| STB45N50DM2AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 500V 35A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
||||||||||
 |
STB45N50DM2AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 500V 35A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|||||||||
|
|
STB45N50DM2AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 500V 35A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|||||||||
|
|
STB45N50DM2AG | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 500V 35A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 84mOhm @ 17.5A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |