Technische Details STB45N65M5 STMicroelectronics
Description: STMICROELECTRONICS - STB45N65M5 - Leistungs-MOSFET, n-Kanal, 650 V, 35 A, 0.067 ohm, TO-263 (D2PAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 650V, rohsCompliant: YES, Dauer-Drainstrom Id: 35A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, Gate-Source-Schwellenspannung, max.: 4V, Verlustleistung: 210W, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: TO-263 (D2PAK), Anzahl der Pins: 3Pin(s), Produktpalette: MDmesh V, productTraceability: No, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.067ohm.
Weitere Produktangebote STB45N65M5 nach Preis ab 5.68 EUR bis 21.52 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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STB45N65M5 | STMicroelectronics |
 Trans MOSFET N-CH 650V 35A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 17000 Stücke: Lieferzeit 14-21 Tag (e) |
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STB45N65M5 | STMicroelectronics |
Description: MOSFET N CH 650V 35A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 19.5A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 100 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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STB45N65M5 | STMicroelectronics |
Trans MOSFET N-CH 650V 35A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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STB45N65M5 | STMicroelectronics |
Trans MOSFET N-CH 650V 35A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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STB45N65M5 | STMicroelectronics |
Trans MOSFET N-CH 650V 35A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 68000 Stücke: Lieferzeit 14-21 Tag (e) |
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STB45N65M5 | STMicroelectronics |
Trans MOSFET N-CH 650V 35A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 68000 Stücke: Lieferzeit 14-21 Tag (e) |
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STB45N65M5 | STMicroelectronics |
Trans MOSFET N-CH 650V 35A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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STB45N65M5 | STMicroelectronics |
MOSFETs N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS |
auf Bestellung 1219 Stücke: Lieferzeit 10-14 Tag (e) |
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STB45N65M5 | STMicroelectronics |
Description: MOSFET N CH 650V 35A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 19.5A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 100 V |
auf Bestellung 2539 Stücke: Lieferzeit 10-14 Tag (e) |
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STB45N65M5 | STMICROELECTRONICS |
Description: STMICROELECTRONICS - STB45N65M5 - Leistungs-MOSFET, n-Kanal, 650 V, 35 A, 0.067 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 35A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 4V Verlustleistung: 210W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: MDmesh V productTraceability: No usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.067ohm |
auf Bestellung 974 Stücke: Lieferzeit 14-21 Tag (e) |
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| STB45N65M5 |
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Hersteller: STMicroelectronics
Trans MOSFET N-CH 650V 35A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 650V 35A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 17000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 6.62 EUR |
| STB45N65M5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N CH 650V 35A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 19.5A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 100 V
Description: MOSFET N CH 650V 35A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 19.5A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 100 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 6.88 EUR |
| STB45N65M5 |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 650V 35A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 650V 35A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 7.54 EUR |
| STB45N65M5 |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 650V 35A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 650V 35A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 7.56 EUR |
| STB45N65M5 |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 650V 35A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 650V 35A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 68000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 11.7 EUR |
| 19+ | 9.02 EUR |
| 100+ | 6.05 EUR |
| 1000+ | 5.68 EUR |
| STB45N65M5 |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 650V 35A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 650V 35A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 68000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 11.7 EUR |
| 19+ | 9.22 EUR |
| 100+ | 6.27 EUR |
| 1000+ | 6 EUR |
| STB45N65M5 |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 650V 35A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 650V 35A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 12.88 EUR |
| 18+ | 9.71 EUR |
| 50+ | 8.43 EUR |
| 100+ | 6.88 EUR |
| 200+ | 6.63 EUR |
| STB45N65M5 |
|
Hersteller: STMicroelectronics
MOSFETs N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS
MOSFETs N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS
auf Bestellung 1219 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 16.48 EUR |
| 10+ | 11.27 EUR |
| 100+ | 8.29 EUR |
| 500+ | 8.27 EUR |
| 1000+ | 7.81 EUR |
| STB45N65M5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N CH 650V 35A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 19.5A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 100 V
Description: MOSFET N CH 650V 35A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 19.5A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 100 V
auf Bestellung 2539 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.8 EUR |
| 10+ | 11.47 EUR |
| 100+ | 8.45 EUR |
| 500+ | 8.41 EUR |
| STB45N65M5 |
|
Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - STB45N65M5 - Leistungs-MOSFET, n-Kanal, 650 V, 35 A, 0.067 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 35A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 210W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: MDmesh V
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.067ohm
Description: STMICROELECTRONICS - STB45N65M5 - Leistungs-MOSFET, n-Kanal, 650 V, 35 A, 0.067 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 35A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 210W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: MDmesh V
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.067ohm
auf Bestellung 974 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 21.52 EUR |
| 13+ | 18.44 EUR |
| 17+ | 12.98 EUR |
| 50+ | 11.63 EUR |
| 100+ | 9.51 EUR |
| 250+ | 8.78 EUR |