Technische Details STB60NE06L-16T4 STM
Description: MOSFET N-CH 60V 60A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V.
Weitere Produktangebote STB60NE06L-16T4
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| STB60NE06L-16T4 | Hersteller : STM |
 TO-263 |
auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) |
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STB60NE06L-16T4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 60V 60A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB60NE06L-16T4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 60V 60A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V |
Produkt ist nicht verfügbar |
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STB60NE06L-16T4 | Hersteller : STMicroelectronics |
MOSFET N-Ch 60 Volt 60 Amp |
Produkt ist nicht verfügbar |