STB7N52K3 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 525V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 3.1A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 737 pF @ 100 V
auf Bestellung 985 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 4.03 EUR |
| 10+ | 3.43 EUR |
| 100+ | 2.87 EUR |
| 500+ | 2.54 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STB7N52K3 STMicroelectronics
Description: MOSFET N-CH 525V 6A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 980mOhm @ 3.1A, 10V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: D²PAK (TO-263), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 525 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 737 pF @ 100 V.
Weitere Produktangebote STB7N52K3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| STB7N52K3 | Hersteller : STMicroelectronics |
|
auf Bestellung 882 Stücke: Lieferzeit 21-28 Tag (e) |
||
|
|
STB7N52K3 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 525V 6A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 3.1A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: D²PAK (TO-263) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 525 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 737 pF @ 100 V |
Produkt ist nicht verfügbar |