STB7NK80Z-1 STMicroelectronics
auf Bestellung 641 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.42 EUR |
| 10+ | 4.54 EUR |
| 25+ | 4.29 EUR |
| 100+ | 3.68 EUR |
| 250+ | 3.48 EUR |
| 500+ | 3.27 EUR |
| 1000+ | 2.64 EUR |
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Technische Details STB7NK80Z-1 STMicroelectronics
Description: MOSFET N-CH 800V 5.2A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc), Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2.6A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 100µA, Supplier Device Package: I2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1138 pF @ 25 V.
Weitere Produktangebote STB7NK80Z-1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| STB7NK80Z-1 | Hersteller : ST |
 TO-263/D2-PAK |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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STB7NK80Z-1 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 800V 5.2A 3-Pin(3+Tab) I2PAK Tube |
Produkt ist nicht verfügbar |
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| STB7NK80Z-1 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 800V 5.2A 3-Pin(3+Tab) I2PAK Tube |
Produkt ist nicht verfügbar |
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STB7NK80Z-1 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 800V 5.2A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2.6A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: I2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1138 pF @ 25 V |
Produkt ist nicht verfügbar |