auf Bestellung 911 Stücke:
Lieferzeit 726-740 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 17.29 EUR |
| 10+ | 15.37 EUR |
| 100+ | 12.92 EUR |
| 250+ | 12.82 EUR |
| 500+ | 11.47 EUR |
| 1000+ | 9.65 EUR |
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Technische Details STB80N20M5 STMicroelectronics
Description: MOSFET N-CH 200V 61A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 61A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 30.5A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4329 pF @ 50 V.
Weitere Produktangebote STB80N20M5
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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STB80N20M5 | Hersteller : STMicroelectronics |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 38A; 190W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 38A Power dissipation: 190W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 23mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STB80N20M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH Si 200V 61A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| STB80N20M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH Si 200V 61A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB80N20M5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 200V 61A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 30.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4329 pF @ 50 V |
Produkt ist nicht verfügbar |
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STB80N20M5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 200V 61A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 30.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4329 pF @ 50 V |
Produkt ist nicht verfügbar |
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STB80N20M5 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 38A; 190W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 38A Power dissipation: 190W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 23mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |