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STB80NE03L-06T4 STM


en.CD00001313.pdf Hersteller: STM
TO-263
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Technische Details STB80NE03L-06T4 STM

Description: MOSFET N-CH 30V 80A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V.

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STB80NE03L-06T4 STB80NE03L-06T4 Hersteller : STMicroelectronics en.CD00001313.pdf Description: MOSFET N-CH 30V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
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STB80NE03L-06T4 STB80NE03L-06T4 Hersteller : STMicroelectronics stmicroelectronics_cd00001313-1204553.pdf MOSFET N-Ch 30 Volt 80 Amp
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