STB9NK60ZT4 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 600V 7A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 3.8 EUR |
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Technische Details STB9NK60ZT4 STMicroelectronics
Description: MOSFET N-CH 600V 7A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 950mOhm @ 3.5A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 100µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V.
Weitere Produktangebote STB9NK60ZT4 nach Preis ab 2.38 EUR bis 7.38 EUR
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STB9NK60ZT4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 7A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3.5A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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STB9NK60ZT4 | Hersteller : STMicroelectronics |
MOSFET N-Ch 600 Volt 7 Amp Zener SuperMESH |
auf Bestellung 988 Stücke: Lieferzeit 14-28 Tag (e) |
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STB9NK60ZT4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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STB9NK60ZT4 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STB9NK60ZT4 - Leistungs-MOSFET, n-Kanal, 600 V, 3.5 A, 0.85 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 3.5A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.75V euEccn: NLR Verlustleistung: 125W Anzahl der Pins: 3Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.85ohm |
auf Bestellung 401 Stücke: Lieferzeit 14-21 Tag (e) |
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STB9NK60ZT4 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STB9NK60ZT4 - Leistungs-MOSFET, n-Kanal, 600 V, 3.5 A, 0.85 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 3.5A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.75V euEccn: NLR Verlustleistung: 125W Anzahl der Pins: 3Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.85ohm |
auf Bestellung 401 Stücke: Lieferzeit 14-21 Tag (e) |
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STB9NK60ZT4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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| STB9NK60ZT4 | Hersteller : ST |
Transistor N-Channel MOSFET; 600V; 30V; 950mOhm; 7A; 125W; -55°C ~ 150°C; STB9NK60ZT4 STB9NK60Z TSTB9NK60Z Anzahl je Verpackung: 10 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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STB9NK60ZT4 Produktcode: 108646 |
Hersteller : STMicroelectronics |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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STB9NK60ZT4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB9NK60ZT4 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 125W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.4A Power dissipation: 125W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STB9NK60ZT4 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 125W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.4A Power dissipation: 125W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |