STB9NK90Z STMicroelectronics
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 8A; 160W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Gate charge: 72nC
On-state resistance: 1.3mΩ
Drain current: 8A
Drain-source voltage: 900V
Power dissipation: 160W
Case: D2PAK
| Anzahl | Preis |
|---|---|
| 27+ | 2.67 EUR |
| 33+ | 2.22 EUR |
| 100+ | 1.77 EUR |
| 250+ | 1.66 EUR |
| 500+ | 1.62 EUR |
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Technische Details STB9NK90Z STMicroelectronics
Description: MOSFET N-CH 900V 8A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.6A, 10V, Power Dissipation (Max): 160W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 100µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2115 pF @ 25 V.
Weitere Produktangebote STB9NK90Z nach Preis ab 2.89 EUR bis 9.15 EUR
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STB9NK90Z | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 900V 8A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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STB9NK90Z | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 900V 8A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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STB9NK90Z | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 900V 8A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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STB9NK90Z | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 900V 8A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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STB9NK90Z | Hersteller : STMicroelectronics |
MOSFETs N Ch 900V 1.1 8A Zener SuperMESH |
auf Bestellung 293 Stücke: Lieferzeit 10-14 Tag (e) |
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STB9NK90Z | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 900V 8A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.6A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2115 pF @ 25 V |
auf Bestellung 117 Stücke: Lieferzeit 10-14 Tag (e) |
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| STB9NK90Z | Hersteller : STM |
Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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STB9NK90Z | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 900V 8A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.6A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2115 pF @ 25 V |
Produkt ist nicht verfügbar |