STD100N10LF7AG STMicroelectronics
Hersteller: STMicroelectronicsMOSFET Automotive-grade N-channel 100 V, 5 mOhm typ., 80 A STripFET F7 Power MOSFET in a DPAK package
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Technische Details STD100N10LF7AG STMicroelectronics
Description: MOSFET N-CH 100V 80A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 40A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote STD100N10LF7AG
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STD100N10LF7AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) DPAK T/R |
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STD100N10LF7AG | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 100V 80A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 40A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |