.jpg "STD100N3LF3")
STD100N3LF3 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 6+ | 2.97 EUR |
| 10+ | 2.47 EUR |
| 100+ | 1.97 EUR |
| 500+ | 1.66 EUR |
| 1000+ | 1.41 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STD100N3LF3 STMicroelectronics
Description: MOSFET N-CH 30V 80A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Last Time Buy, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 110W (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 40A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote STD100N3LF3 nach Preis ab 1.37 EUR bis 3.01 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STD100N3LF3 | Hersteller : STMicroelectronics |
MOSFET N Ch 30V 0.0045 Ohm 80A |
auf Bestellung 3494 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
STD100N3LF3 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 30V 80A DPAK Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Last Time Buy Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
auf Bestellung 1685 Stücke: Lieferzeit 10-14 Tag (e) |
|||||||||||||||||
| STD100N3LF3 | Hersteller : ST |
09+ SOP |
auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |