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STD10LN80K5

STD10LN80K5 STMicroelectronics

en.DM00273040.pdf Hersteller: STMicroelectronics
Description: MOSFET N-CHANNEL 800V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 4A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+3.29 EUR
Mindestbestellmenge: 2500
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Technische Details STD10LN80K5 STMicroelectronics

Description: MOSFET N-CHANNEL 800V 8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 630mOhm @ 4A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 100 V.

Weitere Produktangebote STD10LN80K5 nach Preis ab 3.5 EUR bis 7.15 EUR

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Preis ohne MwSt
STD10LN80K5 STD10LN80K5 Hersteller : STMicroelectronics en.DM00273040.pdf Description: MOSFET N-CHANNEL 800V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 4A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 100 V
auf Bestellung 2687 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.76 EUR
10+ 5.68 EUR
100+ 4.59 EUR
500+ 4.08 EUR
1000+ 3.5 EUR
Mindestbestellmenge: 4
STD10LN80K5 STD10LN80K5 Hersteller : STMicroelectronics std10ln80k5-1850426.pdf MOSFET N-channel 800 V, 0.55 Ohm typ 8 A MDmesh K5 Power MOSFET
auf Bestellung 2682 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
8+7.15 EUR
10+ 6.45 EUR
100+ 5.28 EUR
500+ 4.5 EUR
1000+ 3.8 EUR
2500+ 3.67 EUR
5000+ 3.59 EUR
Mindestbestellmenge: 8
STD10LN80K5 STD10LN80K5 Hersteller : STMicroelectronics dm0027.pdf Trans MOSFET N-CH 800V 8A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
STD10LN80K5 Hersteller : STMicroelectronics dm0027.pdf Trans MOSFET N-CH 800V 8A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar