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STD10N60DM2

STD10N60DM2 STMicroelectronics

en.DM00299236.pdf Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 4A, 10V
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 100 V
auf Bestellung 2400 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.56 EUR
10+ 2.91 EUR
100+ 2.26 EUR
500+ 1.92 EUR
1000+ 1.56 EUR
Mindestbestellmenge: 8
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Technische Details STD10N60DM2 STMicroelectronics

Description: MOSFET N-CH 650V 8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 530mOhm @ 4A, 10V, Power Dissipation (Max): 109W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 100 V.

Weitere Produktangebote STD10N60DM2 nach Preis ab 1.41 EUR bis 3.59 EUR

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STD10N60DM2 STD10N60DM2 Hersteller : STMicroelectronics std10n60dm2-1850548.pdf MOSFET N-channel 600 V, 0.440 Ohm typ 8 A MDmesh DM2 Power MOSFET
auf Bestellung 2172 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
15+3.59 EUR
18+ 2.94 EUR
100+ 2.28 EUR
500+ 1.93 EUR
1000+ 1.57 EUR
2500+ 1.48 EUR
5000+ 1.41 EUR
Mindestbestellmenge: 15
STD10N60DM2 STD10N60DM2 Hersteller : STMicroelectronics dm00299.pdf Trans MOSFET N-CH 600V 8A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
STD10N60DM2 STD10N60DM2 Hersteller : STMicroelectronics std10n60dm2.pdf Trans MOSFET N-CH 600V 8A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
STD10N60DM2 Hersteller : STMicroelectronics dm00299.pdf Trans MOSFET N-CH 600V 8A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
STD10N60DM2 STD10N60DM2 Hersteller : STMicroelectronics en.DM00299236.pdf Description: MOSFET N-CH 650V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 4A, 10V
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 100 V
Produkt ist nicht verfügbar