STD110N02RT4G-VF01 ON Semiconductor

Description: MOSFET N-CH 24V 32A/110A DPAK, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V, Drain to Source Voltage (Vdss): 24 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: DPAK-3, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 2.88W (Ta), 110W (Tc), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 110A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Packaging: Tape & Reel (TR).