STD11N60DM2 STMicroelectronics
Hersteller: STMicroelectronicsMOSFETs N-channel 600 V, 370 mOhm typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package
auf Bestellung 2265 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2.82 EUR |
| 10+ | 2.15 EUR |
| 100+ | 1.51 EUR |
| 500+ | 1.21 EUR |
| 1000+ | 1.14 EUR |
| 2500+ | 0.98 EUR |
| 5000+ | 0.96 EUR |
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Technische Details STD11N60DM2 STMicroelectronics
Description: MOSFET N-CH 650V 10A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 614 pF @ 100 V.
Weitere Produktangebote STD11N60DM2 nach Preis ab 1.17 EUR bis 2.82 EUR
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STD11N60DM2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 10A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 614 pF @ 100 V |
auf Bestellung 1288 Stücke: Lieferzeit 10-14 Tag (e) |
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STD11N60DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R |
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| STD11N60DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R |
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STD11N60DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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STD11N60DM2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 10A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 614 pF @ 100 V |
Produkt ist nicht verfügbar |