STD11NM50N

STD11NM50N STMicroelectronics


1966cd00265975.pdf Hersteller: STMicroelectronics
Trans MOSFET N-CH 500V 8.5A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 237 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
110+1.43 EUR
Mindestbestellmenge: 110
Produktrezensionen
Produktbewertung abgeben

Technische Details STD11NM50N STMicroelectronics

Description: MOSFET N-CH 500V 8.5A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc), Rds On (Max) @ Id, Vgs: 470mOhm @ 4.5A, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 547 pF @ 50 V.

Weitere Produktangebote STD11NM50N nach Preis ab 1.43 EUR bis 3.85 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
STD11NM50N STD11NM50N Hersteller : STMicroelectronics 1966cd00265975.pdf Trans MOSFET N-CH 500V 8.5A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 237 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
110+1.43 EUR
Mindestbestellmenge: 110
STD11NM50N STD11NM50N Hersteller : STMicroelectronics std11nm50n-1850514.pdf MOSFET POWER MOSFET N-CH 500V
auf Bestellung 2058 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
14+3.85 EUR
15+ 3.67 EUR
100+ 3.38 EUR
500+ 2.89 EUR
1000+ 2.44 EUR
2500+ 2.23 EUR
5000+ 2.18 EUR
Mindestbestellmenge: 14
STD11NM50N STD11NM50N Hersteller : STMicroelectronics 1966cd00265975.pdf Trans MOSFET N-CH 500V 8.5A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
STD11NM50N Hersteller : STMicroelectronics 1966cd00265975.pdf Trans MOSFET N-CH 500V 8.5A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
STD11NM50N STD11NM50N Hersteller : STMicroelectronics STD%2CSTF%2CSTP11NM50N.pdf Description: MOSFET N-CH 500V 8.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 4.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 547 pF @ 50 V
Produkt ist nicht verfügbar
STD11NM50N STD11NM50N Hersteller : STMicroelectronics STD%2CSTF%2CSTP11NM50N.pdf Description: MOSFET N-CH 500V 8.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 4.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 547 pF @ 50 V
Produkt ist nicht verfügbar