Technische Details STD11NM60N-1 STM
Description: MOSFET N-CH 600V 10A I-PAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: IPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V.
Weitere Produktangebote STD11NM60N-1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| STD11NM60N-1 | Hersteller : ST |
 TO-252/D-PAK |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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STD11NM60N-1 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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STD11NM60N-1 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 10A I-PAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V |
Produkt ist nicht verfügbar |