STD11NM60ND STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 600V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 2.58 EUR |
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Technische Details STD11NM60ND STMicroelectronics
Description: MOSFET N-CH 600V 10A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V.
Weitere Produktangebote STD11NM60ND nach Preis ab 3.16 EUR bis 7.23 EUR
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STD11NM60ND | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 10A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V |
auf Bestellung 3519 Stücke: Lieferzeit 10-14 Tag (e) |
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STD11NM60ND | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R |
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STD11NM60ND | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R |
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STD11NM60ND | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R |
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| STD11NM60ND | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R |
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STD11NM60ND | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.3A; 90W; DPAK Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±25V Mounting: SMD Case: DPAK Drain-source voltage: 600V Drain current: 6.3A On-state resistance: 0.45Ω Type of transistor: N-MOSFET Power dissipation: 90W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STD11NM60ND | Hersteller : STMicroelectronics |
MOSFETs N-channel 600V, 10A FDMesh II |
Produkt ist nicht verfügbar |
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STD11NM60ND | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.3A; 90W; DPAK Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±25V Mounting: SMD Case: DPAK Drain-source voltage: 600V Drain current: 6.3A On-state resistance: 0.45Ω Type of transistor: N-MOSFET Power dissipation: 90W |
Produkt ist nicht verfügbar |