STD12N60DM2AG STMicroelectronics
Hersteller: STMicroelectronicsMOSFETs Automotive-grade N-channel 600 V, 370 mOhm typ., 10 A MDmesh DM2 Power MOSFET in
auf Bestellung 2370 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.93 EUR |
| 10+ | 3.19 EUR |
| 100+ | 2.34 EUR |
| 500+ | 1.97 EUR |
| 1000+ | 1.9 EUR |
| 2500+ | 1.55 EUR |
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Technische Details STD12N60DM2AG STMicroelectronics
Description: AUTOMOTIVE-GRADE N-CHANNEL 600 V, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 0V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 614 pF @ 100 V, Qualification: AEC-Q101.
Weitere Produktangebote STD12N60DM2AG
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STD12N60DM2AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 10A Automotive 3-Pin(2+Tab) DPAK T/R |
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| STD12N60DM2AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 10A Automotive 3-Pin(2+Tab) DPAK T/R |
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STD12N60DM2AG | Hersteller : STMicroelectronics |
Description: AUTOMOTIVE-GRADE N-CHANNEL 600 V Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 614 pF @ 100 V Qualification: AEC-Q101 |
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STD12N60DM2AG | Hersteller : STMicroelectronics |
Description: AUTOMOTIVE-GRADE N-CHANNEL 600 V Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 614 pF @ 100 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |