STD12N60DM6 STMicroelectronics
auf Bestellung 2387 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.36 EUR |
| 10+ | 2.66 EUR |
| 100+ | 1.90 EUR |
| 500+ | 1.56 EUR |
| 1000+ | 1.47 EUR |
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Technische Details STD12N60DM6 STMicroelectronics
Description: MOSFET N-CH 600V 10A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 100 V.
Weitere Produktangebote STD12N60DM6 nach Preis ab 1.60 EUR bis 3.66 EUR
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STD12N60DM6 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 600V 10A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 100 V |
auf Bestellung 2357 Stücke: Lieferzeit 10-14 Tag (e) |
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STD12N60DM6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 10A 3-Pin(2+Tab) DPAK T/R |
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| STD12N60DM6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 10A 3-Pin(2+Tab) DPAK T/R |
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STD12N60DM6 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 10A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 100 V |
Produkt ist nicht verfügbar |