Produkte > STMICROELECTRONICS > STD12N60DM6
STD12N60DM6

STD12N60DM6 STMicroelectronics

std12n60dm6.pdf Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 100 V
auf Bestellung 2479 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.99 EUR
10+ 4.15 EUR
100+ 3.3 EUR
500+ 2.79 EUR
1000+ 2.37 EUR
Mindestbestellmenge: 6
Produktrezensionen
Produktbewertung abgeben

Technische Details STD12N60DM6 STMicroelectronics

Description: MOSFET N-CH 600V 10A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 100 V.

Weitere Produktangebote STD12N60DM6 nach Preis ab 2.26 EUR bis 5.02 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
STD12N60DM6 STD12N60DM6 Hersteller : STMicroelectronics std12n60dm6-1927864.pdf MOSFET N-channel 600 V, 345 mOhm typ., 10 A MDmesh DM6 Power MOSFET
auf Bestellung 2485 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
11+5.02 EUR
13+ 4.19 EUR
100+ 3.33 EUR
250+ 3.07 EUR
500+ 2.81 EUR
1000+ 2.39 EUR
2500+ 2.26 EUR
Mindestbestellmenge: 11
STD12N60DM6 STD12N60DM6 Hersteller : STMicroelectronics std12n60dm6.pdf Trans MOSFET N-CH 650V 10A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
STD12N60DM6 Hersteller : STMicroelectronics std12n60dm6.pdf Trans MOSFET N-CH 650V 10A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
STD12N60DM6 STD12N60DM6 Hersteller : STMicroelectronics std12n60dm6.pdf Description: MOSFET N-CH 600V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 100 V
Produkt ist nicht verfügbar