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STD12N60M2

STD12N60M2 STMicroelectronics

std12n60m2.pdf Hersteller: STMicroelectronics
Description: MOSFET N-CHANNEL 600V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.09 EUR
Mindestbestellmenge: 2500
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Technische Details STD12N60M2 STMicroelectronics

Description: MOSFET N-CHANNEL 600V 9A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V, Power Dissipation (Max): 85W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V.

Weitere Produktangebote STD12N60M2 nach Preis ab 1.16 EUR bis 2.64 EUR

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STD12N60M2 STD12N60M2 Hersteller : STMicroelectronics std12n60m2.pdf Description: MOSFET N-CHANNEL 600V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
auf Bestellung 7457 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.64 EUR
10+ 2.15 EUR
100+ 1.67 EUR
500+ 1.42 EUR
1000+ 1.16 EUR
Mindestbestellmenge: 7
STD12N60M2 STD12N60M2 Hersteller : STMicroelectronics std12n60m2.pdf Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R
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STD12N60M2 Hersteller : STMicroelectronics std12n60m2.pdf Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
STD12N60M2 STD12N60M2 Hersteller : STMicroelectronics std12n60m2-1850460.pdf MOSFET N-channel 600 V, 0.395 Ohm typ 9 A MDmesh M2 Power MOSFET in DPAK package
Produkt ist nicht verfügbar