STD12NF06T4 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 12A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
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Technische Details STD12NF06T4 STMicroelectronics
Description: STMICROELECTRONICS - STD12NF06T4 - Leistungs-MOSFET, n-Kanal, 60 V, 12 A, 0.1 ohm, TO-252 (DPAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 12A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3V, euEccn: NLR, Verlustleistung: 30W, Bauform - Transistor: TO-252 (DPAK), Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.1ohm, SVHC: No SVHC (25-Jun-2025).
Weitere Produktangebote STD12NF06T4 nach Preis ab 0.41 EUR bis 2.87 EUR
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STD12NF06T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; 30W; DPAK; ESD Mounting: SMD Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar On-state resistance: 0.1Ω Drain current: 8.5A Gate-source voltage: ±20V Power dissipation: 30W Drain-source voltage: 60V Kind of package: reel; tape Case: DPAK |
auf Bestellung 2155 Stücke: Lieferzeit 14-21 Tag (e) |
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STD12NF06T4 | STMicroelectronics |
Description: MOSFET N-CH 60V 12A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 6A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V |
auf Bestellung 5551 Stücke: Lieferzeit 10-14 Tag (e) |
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STD12NF06T4 | STMicroelectronics |
MOSFETs N-Ch 60 Volt 12 Amp |
auf Bestellung 3503 Stücke: Lieferzeit 10-14 Tag (e) |
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STD12NF06T4 | STMICROELECTRONICS |
Description: STMICROELECTRONICS - STD12NF06T4 - Leistungs-MOSFET, n-Kanal, 60 V, 12 A, 0.1 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 12A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 30W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.1ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 5675 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| STD12NF06T4 |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; 30W; DPAK; ESD
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
On-state resistance: 0.1Ω
Drain current: 8.5A
Gate-source voltage: ±20V
Power dissipation: 30W
Drain-source voltage: 60V
Kind of package: reel; tape
Case: DPAK
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; 30W; DPAK; ESD
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
On-state resistance: 0.1Ω
Drain current: 8.5A
Gate-source voltage: ±20V
Power dissipation: 30W
Drain-source voltage: 60V
Kind of package: reel; tape
Case: DPAK
auf Bestellung 2155 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 50+ | 1.46 EUR |
| 76+ | 0.95 EUR |
| 108+ | 0.67 EUR |
| 200+ | 0.62 EUR |
| 500+ | 0.57 EUR |
| 1000+ | 0.47 EUR |
| 2000+ | 0.41 EUR |
| STD12NF06T4 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
Description: MOSFET N-CH 60V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
auf Bestellung 5551 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.64 EUR |
| 11+ | 1.68 EUR |
| 100+ | 1.13 EUR |
| 500+ | 0.89 EUR |
| 1000+ | 0.81 EUR |
| STD12NF06T4 |
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Hersteller: STMicroelectronics
MOSFETs N-Ch 60 Volt 12 Amp
MOSFETs N-Ch 60 Volt 12 Amp
auf Bestellung 3503 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2.87 EUR |
| 10+ | 1.83 EUR |
| 100+ | 1.21 EUR |
| 500+ | 0.96 EUR |
| 1000+ | 0.87 EUR |
| 2500+ | 0.78 EUR |
| 5000+ | 0.73 EUR |
| STD12NF06T4 |
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Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - STD12NF06T4 - Leistungs-MOSFET, n-Kanal, 60 V, 12 A, 0.1 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 12A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 30W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.1ohm
SVHC: No SVHC (25-Jun-2025)
Description: STMICROELECTRONICS - STD12NF06T4 - Leistungs-MOSFET, n-Kanal, 60 V, 12 A, 0.1 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 12A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 30W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.1ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 5675 Stücke:
Lieferzeit 14-21 Tag (e)