STD13NM60ND STMicroelectronics
| Anzahl | Preis |
|---|---|
| 2500+ | 2.78 EUR |
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Technische Details STD13NM60ND STMicroelectronics
Description: MOSFET N-CH 600V 11A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V, Power Dissipation (Max): 109W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V.
Weitere Produktangebote STD13NM60ND nach Preis ab 2.79 EUR bis 8.32 EUR
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STD13NM60ND | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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STD13NM60ND | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 11A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V Power Dissipation (Max): 109W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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STD13NM60ND | Hersteller : STMicroelectronics |
MOSFETs N-CH 600V 0.32Ohm 11A MDmesh II Plus |
auf Bestellung 4046 Stücke: Lieferzeit 10-14 Tag (e) |
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STD13NM60ND | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 11A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V Power Dissipation (Max): 109W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V |
auf Bestellung 9412 Stücke: Lieferzeit 10-14 Tag (e) |
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STD13NM60ND | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| STD13NM60ND | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 109W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 109W Case: DPAK On-state resistance: 0.38Ω Mounting: SMD Gate charge: 24.5nC |
Produkt ist nicht verfügbar |