STD14NM50NAG STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs Automotive-grade N-channel 500 V, 285 mOhm typ., 12 A MDmesh II Power MOSFET in
| Anzahl | Preis |
|---|---|
| 1+ | 2.97 EUR |
| 10+ | 2.22 EUR |
| 100+ | 1.71 EUR |
| 500+ | 1.4 EUR |
| 1000+ | 1.36 EUR |
| 2500+ | 1.21 EUR |
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Technische Details STD14NM50NAG STMicroelectronics
Description: MOSFET N-CH 500V 12A DPAK, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 90W, Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote STD14NM50NAG nach Preis ab 1.52 EUR bis 3.8 EUR
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STD14NM50NAG | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 500V 12A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V Power Dissipation (Max): 90W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 2429 Stücke: Lieferzeit 10-14 Tag (e) |
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STD14NM50NAG | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 500V 12A DPAK Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 90W Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
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