STD14NM50NAG STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs Automotive-grade N-channel 500 V, 285 mOhm typ., 12 A MDmesh II Power MOSFET in
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.53 EUR |
| 10+ | 2.64 EUR |
| 100+ | 2.03 EUR |
| 500+ | 1.67 EUR |
| 1000+ | 1.62 EUR |
| 2500+ | 1.44 EUR |
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Technische Details STD14NM50NAG STMicroelectronics
Description: MOSFET N-CH 500V 12A DPAK, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 90W, Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote STD14NM50NAG nach Preis ab 1.81 EUR bis 4.52 EUR
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STD14NM50NAG | STMicroelectronics |
Description: MOSFET N-CH 500V 12A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V Power Dissipation (Max): 90W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 2429 Stücke: Lieferzeit 10-14 Tag (e) |
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| STD14NM50NAG |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V
Power Dissipation (Max): 90W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET N-CH 500V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V
Power Dissipation (Max): 90W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 2429 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.52 EUR |
| 10+ | 3.2 EUR |
| 100+ | 2.32 EUR |
| 500+ | 1.96 EUR |
| 1000+ | 1.81 EUR |