Weitere Produktangebote STD150N3LLH6
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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STD150N3LLH6 | STMicroelectronics |
 Description: MOSFET N-CH 30V 80A DPAKInput Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
 |
STD150N3LLH6 | STMicroelectronics |
MOSFET POWER MOSFET |
auf Bestellung 1706 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| STD150N3LLH6 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 80A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 80A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
| STD150N3LLH6 |
|
Hersteller: STMicroelectronics
MOSFET POWER MOSFET
MOSFET POWER MOSFET
auf Bestellung 1706 Stücke:
Lieferzeit 10-14 Tag (e)