STD15N60DM6 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 600V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 338mOhm @ 6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 607 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 2453 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.87 EUR |
| 10+ | 2.87 EUR |
| 100+ | 2.20 EUR |
| 500+ | 1.77 EUR |
| 1000+ | 1.74 EUR |
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Technische Details STD15N60DM6 STMicroelectronics
Description: MOSFET N-CH 600V 12A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 338mOhm @ 6A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 607 pF @ 100 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100.
Weitere Produktangebote STD15N60DM6 nach Preis ab 1.53 EUR bis 4.22 EUR
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STD15N60DM6 | Hersteller : STMicroelectronics |
MOSFETs N-channel 600 V, 286 mOhm typ., 12 A MDmesh DM6 Power MOSFET |
auf Bestellung 897 Stücke: Lieferzeit 10-14 Tag (e) |
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STD15N60DM6 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STD15N60DM6 - Leistungs-MOSFET, n-Kanal, 600 V, 12 A, 0.286 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 12A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 110W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: MDmesh DM6 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.286ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 2196 Stücke: Lieferzeit 14-21 Tag (e) |
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STD15N60DM6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) DPAK T/R |
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| STD15N60DM6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) DPAK T/R |
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STD15N60DM6 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 12A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 338mOhm @ 6A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 607 pF @ 100 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100 |
Produkt ist nicht verfügbar |