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STD15N65M5

STD15N65M5 STMicroelectronics

en.DM00055373.pdf Hersteller: STMicroelectronics
Description: MOSFET N CH 650V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 1520 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.01 EUR
100+ 6.8 EUR
500+ 6.04 EUR
1000+ 5.17 EUR
Mindestbestellmenge: 3
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Technische Details STD15N65M5 STMicroelectronics

Description: MOSFET N CH 650V 11A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 340mOhm @ 5.5A, 10V, Power Dissipation (Max): 85W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100.

Weitere Produktangebote STD15N65M5 nach Preis ab 6.06 EUR bis 11.75 EUR

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Preis ohne MwSt
STD15N65M5 STD15N65M5 Hersteller : STMicroelectronics en.DM00055373.pdf MOSFET N-Ch 650 V 0.308 Ohm 11A MDmesh M5
auf Bestellung 2188 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
5+11.75 EUR
10+ 9.85 EUR
25+ 9.31 EUR
100+ 7.98 EUR
250+ 7.54 EUR
500+ 7.07 EUR
1000+ 6.06 EUR
Mindestbestellmenge: 5
STD15N65M5 Hersteller : STMicroelectronics dm0005537.pdf Trans MOSFET N-CH Si 650V 11A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
STD15N65M5 STD15N65M5 Hersteller : STMicroelectronics dm0005537.pdf Trans MOSFET N-CH Si 650V 11A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
STD15N65M5 STD15N65M5 Hersteller : STMicroelectronics en.DM00055373.pdf Description: MOSFET N CH 650V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Produkt ist nicht verfügbar