STD18N55M5 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 550V 16A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 192mOhm @ 8A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
Description: MOSFET N-CH 550V 16A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 192mOhm @ 8A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 3.46 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STD18N55M5 STMicroelectronics
Description: STMICROELECTRONICS - STD18N55M5 - Leistungs-MOSFET, n-Kanal, 550 V, 13 A, 0.18 ohm, TO-252 (DPAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 550V, rohsCompliant: YES, Dauer-Drainstrom Id: 13A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 4V, euEccn: NLR, Verlustleistung: 90W, Bauform - Transistor: TO-252 (DPAK), Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.18ohm, SVHC: No SVHC (17-Dec-2015).
Weitere Produktangebote STD18N55M5 nach Preis ab 3.68 EUR bis 7.54 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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STD18N55M5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 550V 16A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 192mOhm @ 8A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 550 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V |
auf Bestellung 2819 Stücke: Lieferzeit 21-28 Tag (e) |
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STD18N55M5 | Hersteller : STMicroelectronics | MOSFET N-Ch 550V 0.18 13A MDmesh M5 Power MOS |
auf Bestellung 4438 Stücke: Lieferzeit 14-28 Tag (e) |
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STD18N55M5 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STD18N55M5 - Leistungs-MOSFET, n-Kanal, 550 V, 13 A, 0.18 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 550V rohsCompliant: YES Dauer-Drainstrom Id: 13A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 90W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.18ohm SVHC: No SVHC (17-Dec-2015) |
auf Bestellung 1988 Stücke: Lieferzeit 14-21 Tag (e) |
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STD18N55M5 Produktcode: 89163 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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STD18N55M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH Si 550V 16A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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STD18N55M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH Si 550V 16A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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STD18N55M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH Si 550V 16A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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STD18N55M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH Si 550V 16A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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STD18N55M5 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 110W; DPAK Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 110W Case: DPAK Gate-source voltage: ±25V On-state resistance: 192mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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STD18N55M5 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 110W; DPAK Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 110W Case: DPAK Gate-source voltage: ±25V On-state resistance: 192mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |