STD18N60M6 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 600V 13A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
auf Bestellung 1602 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.66 EUR |
| 10+ | 1.89 EUR |
| 100+ | 1.43 EUR |
| 500+ | 1.26 EUR |
| 1000+ | 1.23 EUR |
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Technische Details STD18N60M6 STMicroelectronics
Description: MOSFET N-CH 600V 13A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V.
Weitere Produktangebote STD18N60M6 nach Preis ab 1.09 EUR bis 2.86 EUR
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STD18N60M6 | Hersteller : STMicroelectronics |
MOSFETs N-channel 600 V, 230 mOhm typ 13 A MDmesh M6 Power MOSFET |
auf Bestellung 2047 Stücke: Lieferzeit 10-14 Tag (e) |
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STD18N60M6 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 38A; 110W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 110W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.23Ω Mounting: SMD Kind of channel: enhancement Pulsed drain current: 38A Gate charge: 16.8nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2278 Stücke: Lieferzeit 7-14 Tag (e) |
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STD18N60M6 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 38A; 110W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 110W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.23Ω Mounting: SMD Kind of channel: enhancement Pulsed drain current: 38A Gate charge: 16.8nC |
auf Bestellung 2278 Stücke: Lieferzeit 14-21 Tag (e) |
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| STD18N60M6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 13A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| STD18N60M6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 13A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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STD18N60M6 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 13A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V |
Produkt ist nicht verfügbar |