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STD18N60M6

STD18N60M6 STMicroelectronics

std18n60m6.pdf Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 38A; 110W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 38A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 16.8nC
Kind of channel: enhanced
auf Bestellung 2472 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
25+2.86 EUR
28+ 2.57 EUR
37+ 1.96 EUR
39+ 1.86 EUR
Mindestbestellmenge: 25
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Technische Details STD18N60M6 STMicroelectronics

Description: MOSFET N-CH 600V 13A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V.

Weitere Produktangebote STD18N60M6 nach Preis ab 1.86 EUR bis 5.36 EUR

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STD18N60M6 STD18N60M6 Hersteller : STMicroelectronics std18n60m6.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 38A; 110W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 38A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 16.8nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2472 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
25+2.86 EUR
28+ 2.57 EUR
37+ 1.96 EUR
39+ 1.86 EUR
Mindestbestellmenge: 25
STD18N60M6 STD18N60M6 Hersteller : STMicroelectronics std18n60m6-1588779.pdf MOSFET N-channel 600 V, 230 mOhm typ 13 A MDmesh M6 Power MOSFET
auf Bestellung 2433 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
11+4.99 EUR
13+ 4.21 EUR
100+ 3.59 EUR
250+ 3.02 EUR
500+ 2.59 EUR
1000+ 2.42 EUR
2500+ 2.41 EUR
Mindestbestellmenge: 11
STD18N60M6 STD18N60M6 Hersteller : STMicroelectronics std18n60m6.pdf Description: MOSFET N-CH 600V 13A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
auf Bestellung 1637 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.36 EUR
10+ 4.46 EUR
100+ 3.55 EUR
500+ 3 EUR
1000+ 2.55 EUR
Mindestbestellmenge: 5
STD18N60M6 Hersteller : STMicroelectronics en.dm00562403.pdf Trans MOSFET N-CH 600V 13A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
STD18N60M6 Hersteller : STMicroelectronics en.dm00562403.pdf Trans MOSFET N-CH 600V 13A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
STD18N60M6 STD18N60M6 Hersteller : STMicroelectronics std18n60m6.pdf Description: MOSFET N-CH 600V 13A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
Produkt ist nicht verfügbar