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STD18N65M5

STD18N65M5 STMicroelectronics

STD18N65M5.pdf Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 2185 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
19+3.8 EUR
20+ 3.6 EUR
25+ 2.93 EUR
26+ 2.77 EUR
250+ 2.72 EUR
500+ 2.66 EUR
Mindestbestellmenge: 19
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Technische Details STD18N65M5 STMicroelectronics

Description: MOSFET N-CH 650V 15A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V.

Weitere Produktangebote STD18N65M5 nach Preis ab 2.66 EUR bis 7.31 EUR

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STD18N65M5 STD18N65M5 Hersteller : STMicroelectronics STD18N65M5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2185 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
19+3.8 EUR
20+ 3.6 EUR
25+ 2.93 EUR
26+ 2.77 EUR
250+ 2.72 EUR
500+ 2.66 EUR
Mindestbestellmenge: 19
STD18N65M5 STD18N65M5 Hersteller : STMicroelectronics stb18n65m5.pdf MOSFET N-Ch 650V 0.198 Ohm 15 A MDmesh M5
auf Bestellung 1986 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
8+7.31 EUR
10+ 6.14 EUR
100+ 4.97 EUR
500+ 4.42 EUR
1000+ 3.77 EUR
2500+ 3.56 EUR
5000+ 3.48 EUR
Mindestbestellmenge: 8
STD18N65M5 STD18N65M5 Hersteller : STMicroelectronics stb18n65m5.pdf Trans MOSFET N-CH 650V 15A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
STD18N65M5 Hersteller : STMicroelectronics stb18n65m5.pdf Trans MOSFET N-CH 650V 15A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
STD18N65M5 STD18N65M5 Hersteller : STMicroelectronics stb18n65m5.pdf Description: MOSFET N-CH 650V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
Produkt ist nicht verfügbar
STD18N65M5 STD18N65M5 Hersteller : STMicroelectronics stb18n65m5.pdf Description: MOSFET N-CH 650V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
Produkt ist nicht verfügbar