STD1HN60K3 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 600V 1.2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 600mA, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 2.41 EUR |
| 10+ | 1.98 EUR |
| 100+ | 1.54 EUR |
| 500+ | 1.3 EUR |
| 1000+ | 1.06 EUR |
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Technische Details STD1HN60K3 STMicroelectronics
Description: MOSFET N-CH 600V 1.2A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.2A (Tc), Rds On (Max) @ Id, Vgs: 8Ohm @ 600mA, 10V, Power Dissipation (Max): 27W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V.
Weitere Produktangebote STD1HN60K3 nach Preis ab 0.51 EUR bis 35.75 EUR
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STD1HN60K3 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.76A; 27W; DPAK Mounting: SMD Case: DPAK Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Technology: SuperMesh™ Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 600V Drain current: 0.76A On-state resistance: 8Ω Type of transistor: N-MOSFET Power dissipation: 27W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
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STD1HN60K3 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.76A; 27W; DPAK Mounting: SMD Case: DPAK Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Technology: SuperMesh™ Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 600V Drain current: 0.76A On-state resistance: 8Ω Type of transistor: N-MOSFET Power dissipation: 27W Polarisation: unipolar |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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STD1HN60K3 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 1.2A 3-Pin(2+Tab) DPAK T/R |
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STD1HN60K3 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 1.2A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Tc) Rds On (Max) @ Id, Vgs: 8Ohm @ 600mA, 10V Power Dissipation (Max): 27W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V |
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