STD1NK60-1 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 600V 1A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 25 V
auf Bestellung 5751 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 2.55 EUR |
| 75+ | 2.05 EUR |
| 150+ | 1.62 EUR |
| 525+ | 1.37 EUR |
| 1050+ | 1.12 EUR |
| 2025+ | 1.05 EUR |
| 5025+ | 1 EUR |
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Technische Details STD1NK60-1 STMicroelectronics
Description: MOSFET N-CH 600V 1A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 250µA, Supplier Device Package: IPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 25 V.
Weitere Produktangebote STD1NK60-1 nach Preis ab 0.74 EUR bis 2.56 EUR
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STD1NK60-1 | Hersteller : STMicroelectronics |
MOSFET N-Ch 600 Volt 1.0 A |
auf Bestellung 1540 Stücke: Lieferzeit 14-28 Tag (e) |
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| STD1NK60-1 | Hersteller : ST |
Trans MOSFET N-CH 600V 1A 3-Pin(3+Tab) IPAK Tube STD1NK60-1 TSTD1NK60-1 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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STD1NK60-1 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 1A 3-Pin(3+Tab) IPAK Tube |
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STD1NK60-1 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 1A 3-Pin(3+Tab) IPAK Tube |
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| STD1NK60-1 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 1A 3-Pin(3+Tab) IPAK Tube |
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STD1NK60-1 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.63A; 30W; I2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.63A Power dissipation: 30W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 8.5Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
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STD1NK60-1 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.63A; 30W; I2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.63A Power dissipation: 30W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 8.5Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |