STD1NK60-1 STMicroelectronics
auf Bestellung 6300 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 209+ | 0.69 EUR |
| 225+ | 0.62 EUR |
| 500+ | 0.52 EUR |
| 3000+ | 0.49 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STD1NK60-1 STMicroelectronics
Description: MOSFET N-CH 600V 1A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 250µA, Supplier Device Package: IPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 25 V.
Weitere Produktangebote STD1NK60-1 nach Preis ab 0.33 EUR bis 1.37 EUR
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STD1NK60-1 | Hersteller : STMicroelectronics |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 0.63A; 30W; I2PAK; ESD Type of transistor: N-MOSFET Kind of channel: enhancement Version: ESD Mounting: THT Technology: SuperMesh™ Polarisation: unipolar Drain current: 0.63A Power dissipation: 30W On-state resistance: 8.5Ω Gate-source voltage: ±30V Kind of package: tube Drain-source voltage: 600V Case: I2PAK Anzahl je Verpackung: 1 Stücke |
auf Bestellung 268 Stücke: Lieferzeit 7-14 Tag (e) |
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STD1NK60-1 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.63A; 30W; I2PAK; ESD Type of transistor: N-MOSFET Kind of channel: enhancement Version: ESD Mounting: THT Technology: SuperMesh™ Polarisation: unipolar Drain current: 0.63A Power dissipation: 30W On-state resistance: 8.5Ω Gate-source voltage: ±30V Kind of package: tube Drain-source voltage: 600V Case: I2PAK |
auf Bestellung 268 Stücke: Lieferzeit 14-21 Tag (e) |
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STD1NK60-1 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 1A 3-Pin(3+Tab) IPAK Tube |
auf Bestellung 6310 Stücke: Lieferzeit 14-21 Tag (e) |
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STD1NK60-1 | Hersteller : STMicroelectronics |
MOSFETs N-Ch 600 Volt 1.0 A |
auf Bestellung 4084 Stücke: Lieferzeit 10-14 Tag (e) |
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STD1NK60-1 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 1A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: IPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 25 V |
auf Bestellung 1853 Stücke: Lieferzeit 10-14 Tag (e) |
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STD1NK60-1 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 1A 3-Pin(3+Tab) IPAK Tube |
auf Bestellung 1210 Stücke: Lieferzeit 14-21 Tag (e) |
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| STD1NK60-1 | Hersteller : ST |
Trans MOSFET N-CH 600V 1A 3-Pin(3+Tab) IPAK Tube STD1NK60-1 TSTD1NK60-1 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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STD1NK60-1 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 1A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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| STD1NK60-1 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 1A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |