STD1NK60-1 STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 422+ | 0.42 EUR |
| 430+ | 0.4 EUR |
| 439+ | 0.39 EUR |
| 525+ | 0.37 EUR |
| 1050+ | 0.36 EUR |
| 2025+ | 0.35 EUR |
| 5025+ | 0.33 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STD1NK60-1 STMicroelectronics
Description: MOSFET N-CH 600V 1A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 250µA, Supplier Device Package: IPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 25 V.
Weitere Produktangebote STD1NK60-1 nach Preis ab 0.29 EUR bis 3.2 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STD1NK60-1 | STMicroelectronics |
Trans MOSFET N-CH 600V 1A 3-Pin(3+Tab) IPAK Tube |
auf Bestellung 15410 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
STD1NK60-1 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 0.63A; 30W; I2PAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.63A Power dissipation: 30W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 8.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
auf Bestellung 255 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
STD1NK60-1 | STMicroelectronics |
MOSFETs N-Ch 600 Volt 1.0 A |
auf Bestellung 3852 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
STD1NK60-1 | STMicroelectronics |
Description: MOSFET N-CH 600V 1A IPAKPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: IPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 25 V |
auf Bestellung 739 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
| STD1NK60-1 | ST |
Trans MOSFET N-CH 600V 1A 3-Pin(3+Tab) IPAK Tube STD1NK60-1 TSTD1NK60-1Anzahl je Verpackung: 10 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
|
| STD1NK60-1 |
![]() |
Hersteller: STMicroelectronics
Trans MOSFET N-CH 600V 1A 3-Pin(3+Tab) IPAK Tube
Trans MOSFET N-CH 600V 1A 3-Pin(3+Tab) IPAK Tube
auf Bestellung 15410 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 424+ | 0.42 EUR |
| 432+ | 0.39 EUR |
| 440+ | 0.37 EUR |
| 525+ | 0.35 EUR |
| 1050+ | 0.33 EUR |
| 2025+ | 0.31 EUR |
| 5025+ | 0.3 EUR |
| 10050+ | 0.29 EUR |
| STD1NK60-1 |
![]() |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.63A; 30W; I2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.63A
Power dissipation: 30W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 8.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.63A; 30W; I2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.63A
Power dissipation: 30W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 8.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 255 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 72+ | 1.19 EUR |
| 141+ | 0.61 EUR |
| 160+ | 0.54 EUR |
| 174+ | 0.49 EUR |
| STD1NK60-1 |
![]() |
Hersteller: STMicroelectronics
MOSFETs N-Ch 600 Volt 1.0 A
MOSFETs N-Ch 600 Volt 1.0 A
auf Bestellung 3852 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.17 EUR |
| 10+ | 1.23 EUR |
| 100+ | 1.13 EUR |
| 500+ | 1.04 EUR |
| 1000+ | 0.9 EUR |
| 3000+ | 0.76 EUR |
| 9000+ | 0.75 EUR |
| STD1NK60-1 |
![]() |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 1A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 25 V
Description: MOSFET N-CH 600V 1A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 25 V
auf Bestellung 739 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.2 EUR |
| 75+ | 1.43 EUR |
| 150+ | 1.27 EUR |
| 525+ | 1.06 EUR |
| STD1NK60-1 |
![]() |
Hersteller: ST
Trans MOSFET N-CH 600V 1A 3-Pin(3+Tab) IPAK Tube STD1NK60-1 TSTD1NK60-1
Anzahl je Verpackung: 10 Stücke
Trans MOSFET N-CH 600V 1A 3-Pin(3+Tab) IPAK Tube STD1NK60-1 TSTD1NK60-1
Anzahl je Verpackung: 10 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 1.13 EUR |




