STD20N20-T4

Description: MOSFET N-CH 200V 18A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 90W (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).