STD25N10F7

STD25N10F7 STMicroelectronics


en.DM00095573.pdf
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 25A DPAK
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.71 EUR
Mindestbestellmenge: 2500
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Technische Details STD25N10F7 STMicroelectronics

Description: MOSFET N-CH 100V 25A DPAK, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 40W (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).

Weitere Produktangebote STD25N10F7 nach Preis ab 0.66 EUR bis 2.59 EUR

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STD25N10F7 STD25N10F7 Hersteller : STMicroelectronics en.DM00095573.pdf MOSFETs Nchanl 100V 0027 Ohm typ 25 A Pwr MOSFET
auf Bestellung 1642 Stücke:
Lieferzeit 10-14 Tag (e)
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2+2.57 EUR
10+1.64 EUR
100+1.09 EUR
500+0.86 EUR
1000+0.79 EUR
2500+0.69 EUR
5000+0.66 EUR
Mindestbestellmenge: 2
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STD25N10F7 STD25N10F7 Hersteller : STMicroelectronics en.DM00095573.pdf Description: MOSFET N-CH 100V 25A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 4312 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.59 EUR
11+1.64 EUR
100+1.1 EUR
500+0.86 EUR
1000+0.79 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH