Weitere Produktangebote STD2HNK60Z nach Preis ab 0.82 EUR bis 2.97 EUR
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STD2HNK60Z | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 600V 2A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V |
auf Bestellung 2602 Stücke: Lieferzeit 10-14 Tag (e) |
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STD2HNK60Z | Hersteller : STMicroelectronics |
MOSFETs N Ch 600V Zener SuprMESH 4.4 A |
auf Bestellung 3035 Stücke: Lieferzeit 10-14 Tag (e) |
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| STD2HNK60Z | Hersteller : STM |
N-CH 600V 4.4A 4.8 Om DPAK-3 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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STD2HNK60Z | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 2A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V |
Produkt ist nicht verfügbar |