STD2HNK60Z STMicroelectronics
Hersteller: STMicroelectronicsCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; 45W; DPAK
Type of transistor: N-MOSFET
Case: DPAK
Drain-source voltage: 600V
Drain current: 2A
On-state resistance: 4.8Ω
Mounting: SMD
Power dissipation: 45W
Polarisation: unipolar
Kind of package: reel; tape
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
auf Bestellung 1454 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 107+ | 0.67 EUR |
| 141+ | 0.51 EUR |
| 149+ | 0.48 EUR |
| 155+ | 0.46 EUR |
| 220+ | 0.33 EUR |
| 233+ | 0.31 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STD2HNK60Z STMicroelectronics
Description: MOSFET N-CH 600V 2A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V.
Weitere Produktangebote STD2HNK60Z nach Preis ab 0.31 EUR bis 4.82 EUR
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STD2HNK60Z | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2A; 45W; DPAK Type of transistor: N-MOSFET Case: DPAK Drain-source voltage: 600V Drain current: 2A On-state resistance: 4.8Ω Mounting: SMD Power dissipation: 45W Polarisation: unipolar Kind of package: reel; tape Technology: SuperMesh™ Kind of channel: enhancement Gate-source voltage: ±30V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1454 Stücke: Lieferzeit 7-14 Tag (e) |
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STD2HNK60Z | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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STD2HNK60Z | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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STD2HNK60Z | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 2A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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STD2HNK60Z | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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STD2HNK60Z | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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STD2HNK60Z | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1455 Stücke: Lieferzeit 14-21 Tag (e) |
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STD2HNK60Z | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1455 Stücke: Lieferzeit 14-21 Tag (e) |
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STD2HNK60Z | Hersteller : STMicroelectronics |
MOSFETs N Ch 600V Zener SuprMESH 4.4 A |
auf Bestellung 5690 Stücke: Lieferzeit 10-14 Tag (e) |
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STD2HNK60Z | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 2A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V |
auf Bestellung 13055 Stücke: Lieferzeit 10-14 Tag (e) |
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| STD2HNK60Z | Hersteller : STM |
MOSFET силовой транзистор - [TO-252-3]; Тип: N; 600 В |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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STD2HNK60Z Produktcode: 61746
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Transistoren > MOSFET N-CH |
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| STD2HNK60Z | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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STD2HNK60Z | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |