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STD2LN60K3

STD2LN60K3 STMicroelectronics

STD2LN60K3.pdf Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.26A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.26A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 556 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
57+1.27 EUR
125+ 0.57 EUR
154+ 0.46 EUR
162+ 0.44 EUR
168+ 0.43 EUR
171+ 0.42 EUR
500+ 0.4 EUR
Mindestbestellmenge: 57
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Technische Details STD2LN60K3 STMicroelectronics

Description: MOSFET N CH 600V 2A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V.

Weitere Produktangebote STD2LN60K3 nach Preis ab 0.4 EUR bis 2.24 EUR

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STD2LN60K3 STD2LN60K3 Hersteller : STMicroelectronics STD2LN60K3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.26A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.26A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 556 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
57+1.27 EUR
125+ 0.57 EUR
154+ 0.46 EUR
162+ 0.44 EUR
168+ 0.43 EUR
171+ 0.42 EUR
500+ 0.4 EUR
Mindestbestellmenge: 57
STD2LN60K3 STD2LN60K3 Hersteller : STMicroelectronics std2ln60k3-1850435.pdf MOSFET N-Ch 600V 4ohm 2A SuperMESH3 FET
auf Bestellung 2210 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
31+1.72 EUR
34+ 1.57 EUR
100+ 1.3 EUR
500+ 1.13 EUR
1000+ 0.92 EUR
2500+ 0.85 EUR
5000+ 0.82 EUR
Mindestbestellmenge: 31
STD2LN60K3 STD2LN60K3 Hersteller : STMicroelectronics en.DM00061168.pdf Description: MOSFET N CH 600V 2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V
auf Bestellung 2351 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
12+2.24 EUR
13+ 2.01 EUR
100+ 1.56 EUR
500+ 1.29 EUR
1000+ 1.02 EUR
Mindestbestellmenge: 12
STD2LN60K3 STD2LN60K3 Hersteller : STMicroelectronics dm0006116.pdf Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
STD2LN60K3 STD2LN60K3 Hersteller : STMicroelectronics en.DM00061168.pdf Description: MOSFET N CH 600V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V
Produkt ist nicht verfügbar