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STD35P6LLF6

STD35P6LLF6 STMicroelectronics

en.DM00101433.pdf Hersteller: STMicroelectronics
Description: MOSFET P-CH 60V 35A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 17.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 25 V
auf Bestellung 3362 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.93 EUR
10+ 3.21 EUR
100+ 2.5 EUR
500+ 2.12 EUR
1000+ 1.73 EUR
Mindestbestellmenge: 7
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Technische Details STD35P6LLF6 STMicroelectronics

Description: MOSFET P-CH 60V 35A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 17.5A, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 25 V.

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STD35P6LLF6 STD35P6LLF6 Hersteller : STMicroelectronics std35p6llf6-1850297.pdf MOSFET P-channel 60 V, 0.025 Ohm typ 35 A STripFET F6 Power MOSFET
auf Bestellung 5218 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
14+3.98 EUR
16+ 3.25 EUR
100+ 2.31 EUR
500+ 2.13 EUR
1000+ 1.74 EUR
2500+ 1.64 EUR
5000+ 1.56 EUR
Mindestbestellmenge: 14
STD35P6LLF6 STD35P6LLF6 Hersteller : STMicroelectronics 12081322088990246a.pdf Trans MOSFET P-CH 60V 35A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
STD35P6LLF6 Hersteller : STMicroelectronics en.DM00101433.pdf STD35P6LLF6 SMD P channel transistors
auf Bestellung 1943 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
42+1.73 EUR
60+ 1.2 EUR
63+ 1.14 EUR
Mindestbestellmenge: 42
STD35P6LLF6 Hersteller : ST en.DM00101433.pdf Transistor P-Channel MOSFET; 60V; 20V; 36mOhm; 35A; 70W; -55°C ~ 175°C; STD35P6LLF6 TSTD35p6llf6
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
10+3.42 EUR
Mindestbestellmenge: 10
STD35P6LLF6 STD35P6LLF6 Hersteller : STMicroelectronics en.DM00101433.pdf Description: MOSFET P-CH 60V 35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 17.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 25 V
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