STD37P3H6AG STMicroelectronics
Hersteller: STMicroelectronics
MOSFET Automotive-grade P-channel -30 V, 11 mOhm typ., -49 A STripFET H6 Power MOSFET in a DPAK package
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Technische Details STD37P3H6AG STMicroelectronics
Description: MOSFET P-CH 30V 49A DPAK, Power Dissipation (Max): 60W (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 49A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 4V @ 250µA.
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STD37P3H6AG | Hersteller : STMicroelectronics |
Description: MOSFET P-CH 30V 49A DPAK Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 49A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4V @ 250µA |
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