STD38NH02L-1 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 24V 38A IPAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 24 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: I-PAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
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Technische Details STD38NH02L-1 STMicroelectronics
Description: MOSFET N-CH 24V 38A IPAK, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Drain to Source Voltage (Vdss): 24 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: I-PAK, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 40W (Tc), Rds On (Max) @ Id, Vgs: 13.5mOhm @ 19A, 10V, Current - Continuous Drain (Id) @ 25°C: 38A (Tc).