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STD3LN80K5

STD3LN80K5 STMicroelectronics

en.DM00175097.pdf Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.25Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 2.63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 102 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.43 EUR
Mindestbestellmenge: 2500
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Technische Details STD3LN80K5 STMicroelectronics

Description: MOSFET N-CH 800V 2A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 3.25Ohm @ 1A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 2.63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 102 pF @ 100 V.

Weitere Produktangebote STD3LN80K5 nach Preis ab 1.43 EUR bis 3.67 EUR

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Preis ohne MwSt
STD3LN80K5 STD3LN80K5 Hersteller : STMicroelectronics en.DM00175097.pdf Description: MOSFET N-CH 800V 2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.25Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 2.63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 102 pF @ 100 V
auf Bestellung 4740 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.46 EUR
10+ 2.82 EUR
100+ 2.2 EUR
500+ 1.86 EUR
1000+ 1.52 EUR
Mindestbestellmenge: 8
STD3LN80K5 STD3LN80K5 Hersteller : STMicroelectronics std3ln80k5-1850327.pdf MOSFET N-channel 800 V, 2.75 Ohm typ 2 A MDmesh K5 Power MOSFET
auf Bestellung 5286 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
15+3.67 EUR
16+ 3.28 EUR
100+ 2.56 EUR
500+ 2.12 EUR
1000+ 1.67 EUR
2500+ 1.56 EUR
10000+ 1.43 EUR
Mindestbestellmenge: 15
STD3LN80K5 STD3LN80K5 Hersteller : STMicroelectronics 26823984381884dm0017.pdf Trans MOSFET N-CH 800V 2A 3-Pin(2+Tab) DPAK T/R
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